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2003-12-23, 09:04 AM | [Ignore Me] #21 | ||
Second Lieutenant
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Ok this is the best description for memory timings explantion I've found:
*The first would be the CAS (Column Address Strobe) Latency - Controls the latency between the read command and the time the data becomes available. *Second is RAS (Row Address Strobe) to CAS delay - Controls the latency between the active command and the read/write command. *Third is RAS Precharge Delay - Controls the idle clocks after issuing a precharge command. *Fourth is the Active Precharge Delay - Controlled by the SPD (Serial Presence Detected). It controls the number of DDR clocks used for a DDR Parameter. These settings basically control how "tight" or "loose" your memory runs. The better quality of ram, the faster speeds it can go at tight settings. Sometimes you have to loosen it up some to get the faster speeds out of it. I have some of the almost "rare" now Corsair XMS pc3500 plat that was rated to do 2-2-2-5 at 433. I'm only pushing it at 2-2-2-6 at 400 currently as it really doesn't make hardly any difference and I can run this stable without raising the voltage to my memory. |
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